NOOCA | VDRM V | VRRM V | IT (AV)@80℃ A | ITGQM@CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Fiiro gaar ah:D- leh dqaybta iode, A-oo aan lahayn qayb diode
Sida caadiga ah, alxanka xiriirka IGBT modules-ka waxaa lagu dabaqay qalabka beddelka ee nidaamka gudbinta DC dabacsan.Xirmada moduleka waa kuleyl dhinac kaliya ah oo daadsan.Awoodda korantada ee qalabku way xadidan tahay oo kuma habboona in si taxane ah loogu xidho, cimriga oo liidata hawada milixda, gariir liidata ka hortagga shoogga ama daalka kulaylka.
Nooca cusub ee saxafada-xiriirka sare ee qalabka IGBT ma aha oo kaliya inuu si buuxda u xalliyo dhibaatooyinka bannaan ee habka alxanka, daalka kulaylka ee walxaha alxanka iyo waxtarka hoose ee kuleylka hal-dhinac ah, laakiin sidoo kale wuxuu baabi'iyaa caabbinta kulaylka ee u dhexeeya qaybaha kala duwan. yaree xajmiga iyo miisaanka.Oo si weyn u wanaajiso hufnaanta shaqada iyo isku halaynta aaladda IGBT.Way ku habboon tahay in lagu qanciyo awoodda sare, korantada sare, shuruudaha kalsoonida sare ee nidaamka gudbinta DC dabacsan.
Beddelka nooca xiriirka alxanka ee saxaafadda-pack IGBT waa lama huraan.
Tan iyo 2010, Runau Electronics waxaa loo sii faahfaahiyay si loo horumariyo nooca cusub ee xirmada IGBT aaladda oo lagu guuleysto wax soo saarka 2013. Waxqabadka waxaa lagu caddeeyey shahaado qaran waxaana la dhameeyay guulihii laga gaaray.
Hadda waxaan soo saari karnaa oo bixin karnaa xirmo-saxaafadeed IGBT oo kala duwan oo IC ah oo u dhexeeya 600A ilaa 3000A iyo VCES oo u dhexeeya 1700V ilaa 6500V.Rajo qurux badan oo xirmo-saxaafadeed IGBT oo laga sameeyay Shiinaha in lagu dabaqo Shiinaha nidaamka gudbinta dabacsanaanta DC ayaa aad loo filayaa waxayna noqon doontaa dhagax heer caalami ah oo heer caalami ah oo ka mid ah warshadaha korontada Shiinaha ka dib tareenka xawaaraha sare leh.
Hordhac Kooban ee Habka Caadiga ah:
1. Habka: Press-pack IGBT CSG07E1700
●Tilmaamaha korantada ka dib baakooyinka iyo cadaadiska
● U rogbarbar socdaku xirandiode soo kabasho degdeg ahayuu hadalkiisa kusoo gabagabeeyay
● Parameter:
Qiimaha la qiimeeyay (25℃)
a.Soo-ururinta Emitter Voltage: VGES=1700(V)
b.Gate Emitter Voltage: VCES=±20(V)
c.Ururiyaha Hadda: IC=800(A)ICP=1600(A)
d.Koronto aruuriyaha: PC=4440 (W)
e.Heerkulka Isgoyska Shaqada: Tj=-20~125℃
f.Heerkulka Kaydinta: Tstg=-40~125℃
Ogaysiis: Qalabku wuu dhaawacmi doonaa haddii uu dhaafo qiimaha la qiimeeyay
KorontoChagardaamooyin, TC=125℃, Rth (caabbinta kulaylka eeisgoyska ilaakiis)kuma jiraan
a.Ka Leexitaanka Albaabka Hadda: IGES=±5(μA)
b.Soo-ururinta Emitter xannibista ICES ee hadda jirta=250 (mA)
c.Soo-ururinta Emitter Saturation Voltage: VCE(sat)=6(V)
d.Iridka Emitter-ka Korontada: VGE(th)=10(V)
e.Daar wakhtiga: Ton=2.5μs
f.Deminta wakhtiga: Toff=3μs
2. Habka: Press-pack IGBT CSG10F2500
●Tilmaamaha korantada ka dib baakooyinka iyo cadaadiska
● U rogbarbar socdaku xirandiode soo kabasho degdeg ahayuu hadalkiisa kusoo gabagabeeyay
● Parameter:
Qiimaha la qiimeeyay (25℃)
a.Soo-ururinta Emitter Voltage: VGES=2500(V)
b.Gate Emitter Voltage: VCES=±20(V)
c.Ururiyaha hadda: IC=600(A)ICP=2000(A)
d.Koronto aruuriyaha: PC=4800 (W)
e.Heerkulka Isgoyska Shaqada: Tj=-40~125℃
f.Heerkulka Kaydinta: Tstg=-40~125℃
Ogaysiis: Qalabku wuu dhaawacmi doonaa haddii uu dhaafo qiimaha la qiimeeyay
KorontoChagardaamooyin, TC=125℃, Rth (caabbinta kulaylka eeisgoyska ilaakiis)kuma jiraan
a.Ka Leekaynta Albaabka Hadda: IGES=±15(μA)
b.Soo-ururinta Emitter xannibista ICES ee hadda jirta=25 (mA)
c.Soo-ururinta Emitter Saturation Voltage: VCE(sat)=3.2 (V)
d.Iridka Emitter-ka Korontada: VGE(th)=6.3(V)
e.Daar wakhtiga: Ton=3.2μs
f.Deminta wakhtiga: Toff=9.8μs
g.Korantada hore ee Diode: VF=3.2 V
h.Waqtiga Soo kabashada Diode: Trr=1.0 μs
3. Habka: Press-pack IGBT CSG10F4500
●Tilmaamaha korantada ka dib baakooyinka iyo cadaadiska
● U rogbarbar socdaku xirandiode soo kabasho degdeg ahayuu hadalkiisa kusoo gabagabeeyay
● Parameter:
Qiimaha la qiimeeyay (25℃)
a.Soo-ururinta Emitter Voltage: VGES=4500(V)
b.Gate Emitter Voltage: VCES=±20(V)
c.Ururiyaha hadda: IC=600(A)ICP=2000(A)
d.Koronto aruuriyaha: PC=7700 (W)
e.Heerkulka Isgoyska Shaqada: Tj=-40~125℃
f.Heerkulka Kaydinta: Tstg=-40~125℃
Ogaysiis: Qalabku wuu dhaawacmi doonaa haddii uu dhaafo qiimaha la qiimeeyay
KorontoChagardaamooyin, TC=125℃, Rth (caabbinta kulaylka eeisgoyska ilaakiis)kuma jiraan
a.Ka Leekaynta Albaabka Hadda: IGES=±15(μA)
b.Soo-ururinta Emitter xannibista ICES ee hadda jirta=50 (mA)
c.Soo-ururinta Emitter Saturation Voltage: VCE(sat)=3.9 (V)
d.Iridka Emitter-ka korantada: VGE(th)=5.2 (V)
e.Daar wakhtiga: Ton=5.5μs
f.Deminta wakhtiga: Toff=5.5μs
g.Korantada hore ee Diode: VF=3.8 V
h.Waqtiga Soo kabashada Diode: Trr=2.0 μs
Fiiro gaar ah:Press-pack IGBT waa faa'iido in muddo dheer isku halaynta farsamo sare, iska caabin sare ee waxyeellada iyo sifooyinka saxaafadda isku xira qaab-dhismeedka, waa ku haboon in lagu shaqeeyo qalab taxane ah, iyo marka la barbar dhigo thyristor GTO dhaqameed, IGBT waa habka danab-drive. .Sidaa darteed, way fududahay in la shaqeeyo, badbaado leh oo baaxadda hawlgalka ballaaran.