HEERKA SOO SAARINTA EE TAXANAHA ZW WELDING DIODE
Tixraacyada caadiga ah ee ay dalbatay Jiangsu Yangjie Runau Semiconductor Co ee soo saarista diode alxanka waxay ahaayeen kuwa soo socda:
1. GB/T 4023—1997 Aaladaha kala duwan ee Semiconductor-ka iyo wareegyada isku dhafan Qaybta 2: Diodes Rectifier
2. GB/T 4937—1995 Qaababka Tijaabada Makaanikada iyo Cimilada ee Qalabka Semiconductor
3. JB/T 2423—1999 Qalabka Semiconductor Power - Habka Qaabaynta
4. JB/T 4277-1996 Xidhmada Qalabka Semiconductor Power
5. JB/T 7624—1994 Habka Tijaabada Diode Rectifier
Qaabka Iyo Cabirka
1. Magaca Model: Qaabka alxanka alxanka waxaa loola jeedaa xeerarka JB/T 2423-1999, iyo macnaha qayb kasta oo ka mid ah tusaalaha ayaa lagu muujiyay sawirka 1 ee hoose:
2. Calaamadaha garaafyada iyo aqoonsiga terminal (sub).
Calaamadaha garaafyada iyo aqoonsiga terminalka ayaa lagu muujiyay sawirka 2, falaartu waxay tilmaamaysaa marinka cathode.
3. Qaabka iyo cabbirrada rakibidda
Qaabka diode-ka alxanka ahi waa nooc kakooban iyo saxan, qaabka cabbirkiisuna waa inuu buuxiyaa shuruudaha Jaantuska 3 iyo Shaxda 1.
| Shayga | Cabirka (mm) | ||
| ZW7100 | ZW12000 | ZW16000/ZW18000 | |
| Cathode flange (Dmax) | 61 | 76 | 102 |
| Cathode iyo anode Mesa(D1) | 44±0.2 | 57±0.2 | 68±0.2 |
| Dhexroorka ugu badan ee giraanta dhoobada(D2max) | 55.5 | 71.5 | 90 |
| Wadarta dhumucda (A) | 8±1 | 8±1 | 13±2 |
| Buur booska godka | Dhexroorka daloolka: φ3.5 ± 0.2mm, Qoto dheer ee daloolka: 1.5 ± 0.3mm | ||
| Xusuusin: cabbir faahfaahsan iyo cabbirka fadlan la tasho | |||
Qiimaynta iyo sifooyinka
1. Heerka Parameter
Taxanaha korantada ugu sarreysa ee soo noqnoqonaysa (VRRM) waa sida lagu qeexay Shaxda 2
Shaxda 2 Heerka Korantada
| VRRM(V) | 200 | 400 |
| Heerka | 02 | 04 |
2. Xaddid qiyamka
Qiimayaasha xaddidan waa inay u hoggaansamaan Jadwalka 3 oo waxay khuseeyaan dhammaan kala duwanaanshaha heerkulka hawlgalka.
Shaxda 3 Xadka Qiimaha
| Xaddid Qiimaha | Astaanta | Unug | Qiimaha | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| heerkulka kiiska | Tcase | ℃ | -40-85 | |||
| Heerkulka isku xidhka u dhigma (ugu badnaan) | T(vj) | ℃ | 170 | |||
| Heerkulka kaydinta | Tstg | ℃ | -40-170 | |||
| Korontada danbe ee ugu sarreysa ee soo noqnoqota (max) | VRRM | V | 200/400 | 200/400 | 200/400 | 200/400 |
| Dib u celi korantada ugu sarreysa ee aan soo noqnoqoneynin (max | VRSM | V | 300/450 | 300/450 | 300/450 | 300/450 |
| Waqtiga xaadirka ah celceliska hore (ugu badnaan) | IF (AV) | A | 7100 | 12000 | 16000 | 18000 |
| Kor u kaca hadda (max) hore (aan soo noqnoqonaynin) | IFSM | A | 55000 | 85000 | 120000 | 135000 |
| I²t (ugu badnaan) | I²t | kA²s | 15100 | 36100 | 72000 | 91000 |
| Xoog fuulid | F | kN | 22 ilaa 24 | 30-35 | 45-50 | 52-57 |
3. Qiimaha sifada
Shaxda 4 Qiimaha dabeecadda ugu badan
| Dabeecad iyo xaalad | Astaanta | Unug | Qiimaha | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Korontada ugu sarreysa ee horeIFM= 5000A, Tj=25℃ | VFM | V | 1.1 | 1.08 | 1.06 | 1.05 |
| Dib u celi wakhtiga ugu sarreeya ee soo noqnoqdaTj=25 ℃, Tj=170℃ | IRRM | mA | 50 | 60 | 60 | 80 |
| Iska-caabbinta kulaylka-ka-kiska | Rjc | ℃/ W | 0.01 | 0.006 | 0.004 | 0.004 |
| Fiiro gaar ah: shuruudo gaar ah fadlan la tasho | ||||||
Thediode alxankaay soo saartay Jiangsu Yangjie Runau Semiconductor waxaa si weyn loogu dabaqay alxanka caabbinta, mashiinka alxanka dhexdhexaadka ah iyo inta jeer ee sarreeya ilaa 2000Hz ama ka sareeya.Iyada oo leh koronto heer sare ah oo aad u hooseeya, iska caabin heerkul aad u hooseeya, tignoolajiyada wax soo saarka fanka, awoodda beddelka wanaagsan iyo waxqabadka xasilloon ee isticmaaleyaasha caalamiga ah, diode alxanka ee Jiangsu Yangjie Runau Semiconductor waa mid ka mid ah aaladda ugu kalsoonida badan ee awoodda Shiinaha alaabta semiconductor.